• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a device for determining a contact resistance (Rab) of an H-bridge (2) comprising four transistors (HS1, HS2, LS1, LS2) arranged in H, each transistor having a connection point. (B, D, F, H) to two neighboring transistors, a contact resumption being made between a connection point between two transistors and an access terminal (A, C, E, G), this device comprises: means for applying a determined supply voltage (14) to an access terminal, • means for determining the current (16) flowing in the contact recovery corresponding to said access terminal, • means for measuring the voltage (18) between two access terminals, and • a command to act on the open / closed state of the transistors of the H-bridge.
    公开号:FR3016442A1
    申请号:FR1450163
    申请日:2014-01-10
    公开日:2015-07-17
    发明作者:Angelo Pasqualetto；Jean-Marie Quintin
    申请人:Continental Automotive GmbH；Continental Automotive France SAS；
    IPC主号:
    专利说明:

    [0001] The present invention relates generally to the supply of inductive loads and more particularly to the measurement and detection of anomaly (s) on contact resistor resistors in a switching structure such as a transistor bridge. , for example, adapted to drive a current of determined value in such an inductive load. The invention finds applications, in particular, in the automotive field. It can be implemented, for example, for controlling connectivity (s) of switching structure (s) such as an H bridge. Such structures are used for the control of the direction and / or intensity electrical current in inductive loads such as electric motors. These motors can be used in electronic control systems of an actuator, such as a throttle control device (or ETC device, acronym for "Electronic Throttle Control" in English), or more generally any other equipment powered by electric motor such as a window regulator, for example.
    [0002] FIG. 1 schematically illustrates a control of an inductive load 10 (electric motor or other) being carried out in a known manner using a switching structure 2 (H-bridge type). Such a switching structure 2 comprises in particular four power switches HS1, HS2, LS1 and LS2, each switch being generally composed of a MOS transistor (acronym for "Metal Oxide Semiconductor") power. These four transistors are managed at a "control" layer of the system, coming over a "component" layer constituted by the electronic components of the H bridge itself. A sequence of control signals for each of the transistors is produced according to a determined strategy, for example from a command command signal. This strategy causes the H-bridge to be controlled in certain configurations by using command sets that leave certain combinations or sets of commands unused. The components that constitute the control structure of the H bridge are generally integrated in boxes called integrated circuits. Such circuits are designed using design and assembly techniques from microelectronics. In an effort to increase performance and reduce costs, integrated circuits in general and integrated circuits dedicated to the automotive industry in particular face an incessant need to reduce their size and increase their size. integration and their performance can sometimes cause problems of overheating in the circuits.
    [0003] A source of heating at an integrated circuit, such as an H 2 bridge illustrated in FIG. 1, is the connection of this circuit to access terminals to this circuit for, for example, its power supply and to its connection to the corresponding load. In the case illustrated in FIG. 1, the transistors HS1, HS2, LS1 and LS2 are connected, on the one hand, to a battery 3 delivering a voltage Vbat and to a reference potential such as a mass GND and, on the other hand, On the other hand, a connection called contact recovery 6 is made between a connection point 4 between two transistors and a terminal 8 for access to the H 2 bridge. These contacts 6 introduce resistors in the circuit which then give off heat by Joule effect during the operation of the circuit. Several connection techniques are possible and well known to those skilled in the art, such as, for example, the wire bonding technique known as "wire bonding" using metallic wires to connect the various components. In order to optimize and / or make more reliable the resumption of contacts between the various elements, it is possible to use several connection wires which are then connected in parallel. When controlling a motor, for example, predetermined combinations activate certain pairs of control transistors of the H 2 bridge and circulate currents of greater or lesser strength in the corresponding connection wires 20 which can cause overheating due to the passage of an important current. These overheating causes a localized rise in temperature mainly at the level of the connection wires and cause a relatively large variation in the internal resistance of the connection wires concerned, which can in certain cases cause them to break. If a connecting wire is badly connected, the overall resistance of the corresponding contact recovery, also called contact resistance, is affected. Ideally, the correct connection of each connecting wire should be verified by measuring, for example, the corresponding contact resistance. It is necessary to be able to separately and independently test the contact recoveries in order to identify if at least one wire 30 has failed. Resistance of contact resumption can be estimated theoretically from the knowledge of the length (maximum value for the worst case) and the diameter (minimum value for the worst case) of the son used, the used material being known. The maximum theoretical value can be used as a comparison reference for the measurement. It is an object of the present invention to provide means for determining that all internal connections are correctly made by measuring the contact resistance at a resumption of contact of an H-bridge. The present invention proposes a device for determining a contact resistance of an H bridge comprising four transistors arranged in H, each transistor having a connection point to two neighboring transistors, a contact resumption being carried out each time between a connecting point located between two transistors and an access terminal. According to the present invention, this device comprises: means for applying a determined supply voltage to an access terminal; means for determining the current flowing in the contact recovery corresponding to said access terminal; means for measuring the voltage between two access terminals, and - control means for acting on the open / closed state of the transistors of the H-bridge. The means presented here in the proposed configuration, choosing the right state for the transistors makes it possible to measure, on the one hand, the current flowing in the contact resistance that is to be determined and, on the other hand, the potential difference across its terminals. A simple calculation (a division) then makes it possible to determine the desired resistance value. In one embodiment of the invention, the voltage applied to one of the two access terminals is advantageously less than the voltage used operationally. The voltage applied to the access terminal may for example be between 0.5 V and 5 V. In an H bridge, one of the access terminals is connected to ground. In order to be able to determine in one measurement the value of the contact resistance corresponding to this access terminal and that of a contact resistance corresponding to a neighboring access terminal, the device according to the invention comprises a single terminal of access connected to the ground and advantageously means for measuring the voltage at the access terminal opposite to the access terminal connected to ground. This device then comprises two separate means 30 (voltmeters) for measuring voltage. The present invention also relates to a method for determining a contact resistance of an H bridge comprising four transistors arranged in H, each transistor having a connection point with two neighboring transistors, a contact resumption being carried out each time. between a connection point located between two transistors 35 and an access terminal. According to the invention, this method comprises the following steps: acting on the open / closed state of the H-bridge transistors so that the transistors on either side of the connection point corresponding to the access terminal are closed, - applying a determined voltage to an access terminal, - determining the current flowing in the contact recovery corresponding to said access terminal, - grounding an access terminal adjacent to said access terminal; access terminal if this neighboring access point is not already connected to ground, and - measurement of the voltage at the other adjacent access point.
    [0004] For the implementation of this method, the voltage applied to the access terminal is advantageously less than the control voltage of each of the transistors. It may be between 0.5 V and 5 V. Other features and advantages of the invention will become apparent on reading the description which follows. This is purely illustrative and is made with reference to the appended drawing in which: - Figure 1 is a block diagram illustrating an H-bridge and a controlled inductive load, - Figures 2a to 2h are diagrams illustrating the modes of operational control of an inductive load; FIG. 3 is a block diagram for the implementation of the present invention; Table showing the characteristics of various operational states of an H-bridge, it shows the states used in FIGS. 2a to 2h; FIG. 6 is a table illustrating transistor H-bridge transistors for implementation of the present invention, and - Figures 7 to 14 illustrate the implementation of the commands of the table of Figure 6. Referring to Figure 1, a device for controlling an inductive load 1 comprises a structure of commutat ion type "H bridge". Such a switching structure comprises four power switches, each consisting in the illustrated embodiment of a power MOS transistor. The following figures show an example of connections connecting the H bridge to an electric motor.
    [0005] A first transistor HS1 is connected between, on the one hand, a positive power supply terminal brought to the voltage Vbat of a battery 3 and, on the other hand, a first terminal OUT1 of the motor 10. A second transistor LS1 is connected. between, on the one hand, said first terminal OUT1 of the motor 10 and, on the other hand, a terminal brought to a reference potential, here a ground GND. A third transistor LS2 is connected between, on the one hand, a second terminal OUT2 of the motor 10 and, on the other hand, the mass GND. Finally, a fourth transistor HS2 is connected between, on the one hand, the battery 3 10 at its positive power supply terminal Vbat and, on the other hand, the second terminal OUT2 of the motor 10. The transistors HS1 and HS2 are called high-side transistors and transistors LS1 and LS2 are called low-side transistors. The H-bridge can be controlled according to several states. In a first state, the pair formed of the high transistor HS1 and the low transistor LS2 makes it possible, when these transistors are on (closed switches), to circulate a current through the motor 10 in a first direction, as indicated by an arrow. in Figure 2a. Transistors HS2 and LS1 are then blocked (open switches). This state is called F (for "Forward" in English, ie before in French). In a second state, the pair formed of the low transistor LS1 and the high transistor HS2 makes it possible, when these transistors are on (closed switches), to circulate a current through the motor 10 in the other direction, as indicated by FIG. arrow in Figure 2b. Transistors HS1 and LS2 are then blocked (open switches). This state is called R (of the English "Reverse" is inverse in French). Finally, two other states illustrated in Figures 2c and 2f correspond to two states called free wheel or RL. When the high transistors HS1 and HS2 are off (open switches) and the low transistors LS1 and LS2 are on (closed switches). The corresponding freewheel state is called low freewheel state (or RL LS) and vice versa when the high transistors HS1 and HS2 are on (closed switches) and the low transistors LS1 and LS2 are off (open switches), this corresponds to a high freewheel state (RL HS). The freewheels may also take place with only one of the four closed MOSs, following the direction of the current, as shown in Figures 2d, 2e, 2g, and 2h. The H-bridge, or more precisely the components constituting the structure of the H-bridge, such as, for example, the MOS transistors mentioned above, are generally integrated in a box or more commonly referred to as an integrated circuit that has been manufactured using the H-bridge techniques. design and assembly of microelectronics. To extend the connectivity of the integrated circuit to the outside, it is necessary to connect said integrated circuit to external elements as explained in the preamble with reference to FIG. 1. To do this, several connection techniques are possible and well known in the art. skilled in the art, such as for example the technique of connection using wire named in English "Wire Bonding". These wires allow the connection of the integrated circuit to terminals of external elements. In order to optimize the contact recovery between the integrated circuit and the external elements, several connection wires are commonly used, said wires being then paralleled between the integrated circuit and the corresponding external element on the same contact pad. each of the ends of the connection wires. The presence of these connection wires (also commonly known as bonding wires or contact resumption wires) causes the appearance of, inter alia, resistors known as contact resistances. These contact resistances vary as a function, on the one hand, of the nature of the metal used to make the connection wires and, on the other hand, of the geometry and the number of connection wires used. FIG. 3 diagrammatically represents the equivalent contact resistances for the connection of an H-bridge. In this FIG. 3, with respect to FIG. 1, the connection points 4 (FIG. 1) have been referenced with the letters B, D. , F and H (Figure 3) while the access terminals 8 (Figure 1) have been referenced with the letters A, C, E and G (Figure 3). A first resistor Rab corresponds to the (x) wire (s) connecting the connection point B between the transistors HS1 and HS2 to the access terminal A connected to the positive terminal of the battery 3, at the same time. The second contact resistance Rgh corresponds to the connection wire (s) connecting, on the one hand, the connection point H of the transistors LS1 and LS2 and, on the other hand, a GND ground connection terminal G. A third contact resistor Rcd corresponds to the connection wire (s) connecting, on the one hand, the connection point D of transistors HS1 and LS1 and, on the other hand a point C corresponding to an output pin of the H-bridge intended to be connected to the OUT1 terminal of the motor 10. A fourth contact resistor Ref corresponds to the connecting wire (s) connecting, on the one hand , the connection point F of the transistors HS2 and LS2 and, on the other hand, a point E corresponding to a bridge output pin in order to be connected to the terminal OUT2 of the motor 10. In order to measure the contact resistances separately, it is proposed to make the four transistors of the H-bridge switch in open or closed states according to a particular strategy for the measurement. . This strategy necessarily implies control combinations different from those involved when controlling the inductive load. FIG. 5 shows a combination table that can be implemented when controlling the inductive load. Thus, the measurements of the resistors Rcd and Ref can not be made from the combinations shown in FIG. 5 because they would imply connections which would lead to unacceptable short circuits in the operational mode. Figure 6 shows a combination table for measuring the resistances Rcd and Ref. This strategy using among other things the combinations presented in FIG. 6 can be implemented with a structure such as that represented in FIG. 4. A control unit 12 makes it possible, as a function of digital signals through a digital link, to no longer be controlled by PWM and DIR signals. Thus, the control unit 12 can establish a control set CH1 (for HS1), a control set CTd when a transistor Td is coupled between the point D and the point B, a control set CH2 (for HS2 ), a control set CTe when a transistor Tf is coupled between the point E and the point B, a command set CL1 (for LS1) and a command set CL2 (for LS2) according to the received code. It is advisable to secure the entry in this mode in order to prohibit that the combinations are possible under the effect of a simple parasite during the operational mode. The high transistors (HS1 and HS2) can impose, depending on the technology used, conditions as to the voltage to be applied to the terminal A. For example, in the case of P-type MOS transistors, this voltage must be applied. at the source, which is sufficient for the VGS voltage to reach at least 3V. In this case, it may be necessary to insert a resistance on the ground side to limit the current. The use of 25 N-type MOS transistors does not impose such a constraint provided that at least 5 V is applied directly to the output of the charge pump (in a design targeted at the operational mode, the charge pump is not effective at low voltage). Some figures represent cases where the high transistors are of type P. In this case, the type P is mentioned in the figure by an extension "-P" after the name of the transistor concerned. When the type is not mentioned, it is N type MOS. If the total resistance is 100 min (including the contact and wiring resistances), then a current of 10 A is injected. . If the contact resistance to be measured is of the order of 10 minutes, then it is a matter of measuring by a voltmeter 18 a voltage of the order of 100 mV. At first, the characterization of the resistance Rab is described in detail. The characterization of the other resistances will then be described more succinctly.
    [0006] A stabilized power supply 14 is connected to the access terminal A and an ammeter 16 in series with the contact resistance Rab measures the current I passing through it as shown in FIG. 7a. An access terminal adjacent to the access terminal A of the H-bridge is connected to ground. In the embodiment of FIG. 7, the access terminal E is thus connected to ground. The other adjacent access terminal, that is to say here the access terminal C is connected to an input pin named Vm (cold point) of a voltmeter 18 capable of measuring a corresponding voltage V at the potential difference between the access terminals A and C. The other terminal Vp (hot spot) of the voltmeter 18 is connected to the access terminal A. The hot point Vp is a point at a higher potential than the cold point Vm. To characterize the contact resistance Rab for example it is necessary here that the transistors HS1 and HS2 (FIGS. 6 and 7a) are in the "ON" position, a position corresponding to a switched or on state. The transistors LS1 and LS2 are in their "OFF" position, that is to say in the open or blocked position. FIG. 7a thus represents these transistors in dashed lines. The table of FIG. 6 shows the different switching sets for the transistors HS1, HS2, LS1 and LS2 allowing the characterization of the contact resistances Rab, Rcd, Ref and Rgh. The potential applied to the access terminal A by the stabilized power supply 14 as described previously can be for example of the order of 1 V. It will be as constant as possible and its value will be for example between 0.5 V and 5 V. The potential measured at the point C is in fact substantially identical to the potential of the point B. Indeed, because of the "ON" or passing state of the transistor HS1, the voltage drop across the transistor HS1 is negligible. In addition, the resistance of the voltmeter 18 is very large in front of all the resistors of the circuit so that an extremely low current flows in the transistor HS1 and in the contact resistance Rcd. Thus the potentials in B and C can be considered equal. The electric current flowing through the resistor Rab to be characterized is measured by the ammeter 16. Said value of the resistor to be characterized is then equal to: Rab = V / I (Eq.1) V being the value of the voltage measured by the voltmeter 18 at point C, and I the value of the current flowing through the resistance to be characterized Rab measured by the ammeter 16. The value of the contact resistance Rab depends inter alia on the nature of the metal used for the manufacture of the connection wires. used to perform the corresponding contact recovery. Assuming all the similar connection son in the same contact resumption, the corresponding contact resistance depends in fact mainly on the number of connection wires between the point of connection of the H bridge and the access terminal. The resistor Rab represents the equivalent resistance of all the connection wires used for the resumption of contact connecting the connection point B to the access terminal A. These wires being connected in parallel with each other, their equivalent resistance called Rab is equal to: Rab - 1 1, (Eq.2) 1 1 1 1 1 + + + n (Rab) Rabl Rab 2 Rab 3 Rabn where Rabn represents the resistance of a connection wire used to carry out the corresponding contact recovery .
    [0007] In view of the above formula of the equivalent resistance Rab, we can for example deduce the equivalent resistance Rab for two connection wires used to perform the resumption of contact as follows: 1 Rabl x Rab2 Rab -, ( Eq.3) 1+ 1 Rabl + Rab2 Rabl Rab2 Rab1 representing the resistance of the first connection wire, Rab2 representing the resistance of the second connection wire. If we consider that the value of the contact resistance of a connection wire is for example of the order of 20 minutes, then the value of the resistance Rab corresponding to the equivalent resistance of the two connection wires connected in parallel will be equal to 10 minutes.
    [0008] In the event of a break in one of the two connection wires used to make this resumption of contact, the value of the resistance will be doubled and will increase to 20 minutes. This modification of the value of Rab will have the effect of modifying the measured values of V (essentially) and I (very slightly). Once the value of the contact resistance obtained, it can either be stored in an internal register to the calculation unit or in a component external to the calculation unit for subsequent processing or it can be used for compared to reference values of contact resistances. Several strategies for comparing or monitoring contact resistances can be envisaged. In FIG. 7b, for the measurement of Rab, the high transistors HS1 and HS2 of type P and denoted HS1-P and HS2-P can not be controlled by a voltage as low as 1V. The voltage delivered by the power supply 14 is thus set at 5V, and the current is limited by a resistance of 0.4 μ between the terminal E and the ground. Another possible configuration of circuitry for measuring Rab is shown in FIG. 8a (and in the table of FIG. 6).
    [0009] In the configuration of FIG. 8a with respect to that of FIG. 7a, the changes in connections and connections do not affect the voltage supply, the stabilized power supply 14 remaining connected to the access pin A as well as the ammeter 16.
    [0010] It is proposed in FIG. 8a to measure the voltage between the access terminals A and E and to set the other adjacent access terminal to the access terminal A, that is to say the terminal of access C to the mass. Those skilled in the art will immediately understand that this arrangement is equivalent to that of FIG. 7a and quite similarly makes it possible to determine the resistance Rab. Also, slight changes make it possible to go from FIG. 7b to FIG. 8b by inverting the roles of the terminals C and E. The second contact resistance to be characterized on the four represented in FIG. 3 is the resistor Ref. To do this, as shown in FIG. 9a, the stabilized power supply 14 is connected to the access terminal E corresponding to this resistor Ref. The ammeter 16 is connected in series to determine the current I flowing in the resistor Ref. It should be noted here that the access terminal G, which is an access terminal near the access terminal E corresponding to the contact resistance that it is desired to characterize, is already connected to the ground by construction. Then we just connect the voltmeter 18 to determine the voltage between the access terminals E and A. To determine the contact resistance Ref, it is proposed here that the transistors HS2 and LS2 (Figure 9a) connected at the point link corresponding to the contact resistance that is to be determined are in the "ON" position, a position corresponding to a switched state or passing. The transistors HS1 and LS1 are for their part in the "OFF" position, that is to say in the open position or blocked. The potential applied by the stabilized power supply as described previously can be for example of the order of 1V and will be applied to the terminal E as shown in Figure 9a. The potential at the point A is identical to the potential at the point F because of the "ON" or passing state of the transistor HS2. The electrical current flowing through the circuit and more particularly the current flowing through the resistor to be characterized, that is to say the resistor Ref, is measured by the ammeter 16. The potential difference V is measured between the terminals E (hot spot). and A (cold point). The value of the resistor to be characterized is then equal to: Ref = V / I (Eq.4) FIGS. 9b and 9c represent possibilities for measuring the resistor Ref when the high transistors are of type P. It is then essential to use an additional transistor Tf to bring the potential of F to a measurable point (A in Figure 9b, or K in Figure 9c). This transistor Tf is an N-type MOS of very small size and whose resistance can reach a few Ohms, which does not substantially alter the measurement. The third resumption of contact resistor on the four shown in the diagram of Figure 3 is the resistor Rcd.
    [0011] To do this (FIG. 10a), the stabilized power supply 14 is connected to the access terminal C corresponding to the contact resistance to be characterized. The ammeter 16 is connected in series with the resistor Rcd to measure the current flowing through it. As for the determination of the value of the resistor Ref, it is noted that an access terminal (the access terminal G) adjacent to the access terminal C 10 corresponding to the contact resistance that one wants to determine is already connected to the ground. As before, here we come to determine the voltage at the other access terminal adjacent to the access terminal corresponding to the contact resistance that it is desired to determine. The access terminal A is then connected to an input pin 15 named Vm (cold spot) of the voltmeter 18 as shown in FIG. 10a. The other terminal Vp of the voltmeter 18 is itself connected to the terminal C. To characterize the contact resistance Rcd it is proposed that the transistors HS1 and LS1 (FIG. 10a) are in the "ON" position, a position corresponding to a switched state or passing. The transistors HS2 and LS2 are in their "OFF" position, that is to say in the open position or blocked (FIGS. 6 and 10a). As already explained above for the resistors Rab and Ref, the value of the resistance to be characterized is then equal to: Rcd = V / I (Eq.5) FIGS. 10b and 10c represent possibilities for measuring the resistance Rcd when the High transistors are of type P. An auxiliary transistor Td is then necessary to reduce the potential of point B to point A (FIG. 10b) or point K (FIG. 10c). The fourth and last resumption of contact resistor on the four shown in the diagram of Figure 3 is the resistance Rgh. It is proposed here (FIGS. 6 and 11) to connect the stabilized power supply 14 to the access terminal C and to measure the current in the corresponding resistor Rcd using the ammeter 16. The terminal of access G is already connected to ground. The voltmeter 18 is used here to measure the voltage between the access terminal E 35 and the access terminal G, that is to say the ground.
    [0012] The transistors named LS1 and LS2 (FIG. 11) are in the "ON" position, a position corresponding to a switched or on state. The transistors HS1 and HS2 are in their "OFF" position, that is to say in the open position or blocked. The current flowing in the contact resistance Rcd also corresponds to the current flowing in the contact resistance Rgh that is to be determined. In addition, the potential at the point E is (very substantially) identical to the potential of the connection point H if the voltage drop across the transistor LS2 is neglected. Thus, on the one hand, the potential difference across Rgh is known and on the other hand the current flowing in this resistor. Resistance Rgh can therefore be determined.
    [0013] By symmetry of the H-bridge, as suggested in FIG. 6, it is also possible to determine Rgh to connect the ammeter 16 and the stabilized power supply 14 to the access terminal E and to measure the electrical potential of the terminal. C access using the voltmeter 18, which is proposed in Figure 12. With two other sets of combinations and two other specific connectors it is possible to simultaneously measure the pairs of resistors [Ref; Rgh] and [Rcd; Rgh]. The use of an additional voltage measuring apparatus 19 is proposed to carry out the characterization of this pair of resistors. FIGS. 13 and 14 show the positions of the different measuring and power devices used for the measurement of these pairs of resistors and also a control set for the power MOS transistors. This technique will make it possible to measure two resistor contacts simultaneously. It will be appreciated that the invention is not limited to the embodiment of the power switches (MOS transistors) which is merely an illustrative, non-limiting example. The above description has been given for illustrative purposes only, and is not limiting of the scope of the invention. Any alternative embodiment within the reach of those skilled in the art on the basis of the foregoing description may be considered within the scope of the present invention.
    [0014] Likewise, the numerical values are not limited to the examples given here purely by way of illustration, and may be of any other value because of the embodiment system. Finally, it is understood that the invention applies to the control of any inductive load, not only to that of an electric motor. It can be, for example, an electromagnetic actuator with fixed coil and moving core (or vice versa).
    权利要求:
    Claims (7)
    [0001]
    REVENDICATIONS1. Device for determining a contact resistance (Rab, Rcd, Ref, Rgh) of an H bridge (2) having four transistors (HS1, HS2, LS1, LS2) arranged in H, each transistor having a point of connection (4, B, D, F, H) to two neighboring transistors, a contact resumption (6) being carried out each time between a connection point (4, B, D, F, H) located between two transistors and an access terminal (8, A, C, E, G), characterized in that it comprises: - means for applying a determined supply voltage (14) to an access terminal (8, A , C, E, G), - means for determining the current (16) flowing in the contact recovery (6) corresponding to said access terminal (8, A, C, E, G), - means for measuring the voltage (18) between two access terminals (8, A, C, E, G), and - control means (12) for acting on the open / closed state of the transistors (HS1, HS2 LS1, LS2) of the H-bridge.
    [0002]
    2. Device according to claim 1, characterized in that the voltage applied to one of the two access terminals (8, A, C, E, G) is less than the voltage used operationally.
    [0003]
    3. Device according to any one of claims 1 or 2, characterized in that the voltage applied to the access terminal (8, A, C, E, G) is between 0.5 V 20 and 5 V.
    [0004]
    4. Device according to any one of claims 1 to 3, characterized in that it comprises a single access terminal (G) connected to the ground and means for measuring the voltage (18) to the terminal d access (A) opposite the access terminal (G) connected to ground. 25
    [0005]
    5. A method for determining a contact resistance (Rab, Rcd, Ref, Rgh) of an H bridge (2) comprising four transistors (HS1, HS2, LS1, LS2) arranged in H, each transistor having a connecting point (4, B, D, F, H) to two neighboring transistors, a contact resumption (6) being carried out each time between a connection point (4, B, D, F, H) situated between two transistors and an access terminal (8, A, C, E, G), characterized in that it comprises the following steps: acting on the open / closed state of the transistors of the H-bridge so that the transistors on either side of the connection point (4, B, D, F, H) corresponding to the access terminal (8, A, C, E, G) are open, - application of a voltage determined at an access terminal (8, A, C, E, G), - determination of the current flowing in the contact recovery (6) corresponding to said access terminal (8, A, C, E, G) , - grounding of a neighboring access terminal to said access terminal (8 , A, C, E, G) if this neighboring access terminal is not already connected to ground, and - measuring the voltage at the other access terminal (8, A, C, E, G ) neighbor.
    [0006]
    6. Method according to claim 5, characterized in that the voltage applied to the access terminal (8, A, C, E, G) is less than the control voltage of each of the transistors.
    [0007]
    7. Method according to any one of claims 5 or 6, characterized in that the voltage applied to the access terminal (8, A, C, E, G) is between 0.5 V and 5 V.
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    同族专利:
    公开号 | 公开日
    CN104777365A|2015-07-15|
    CN104777365B|2019-04-02|
    US20150198642A1|2015-07-16|
    FR3016442B1|2017-07-21|
    US9880229B2|2018-01-30|
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    法律状态:
    2016-01-21| PLFP| Fee payment|Year of fee payment: 3 |
    2017-01-20| PLFP| Fee payment|Year of fee payment: 4 |
    2018-01-19| PLFP| Fee payment|Year of fee payment: 5 |
    2020-01-21| PLFP| Fee payment|Year of fee payment: 7 |
    2021-01-21| PLFP| Fee payment|Year of fee payment: 8 |
    2021-04-16| TP| Transmission of property|Owner name: VITESCO TECHNOLOGIES, DE Effective date: 20210309 |
    2022-01-19| PLFP| Fee payment|Year of fee payment: 9 |
    2022-02-11| CA| Change of address|Effective date: 20220103 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1450163A|FR3016442B1|2014-01-10|2014-01-10|MEASUREMENT OF CONTACT RESISTANCE RESISTORS|FR1450163A| FR3016442B1|2014-01-10|2014-01-10|MEASUREMENT OF CONTACT RESISTANCE RESISTORS|
    US14/585,479| US9880229B2|2014-01-10|2014-12-30|Measurement of bonding resistances|
    CN201510011252.9A| CN104777365B|2014-01-10|2015-01-09|The measurement of overlap resistance|
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